[22a-12J-1~8] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-12J-3] [The 55th Young Scientist Presentation Award Speech] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3D Integrated Devices

〇Kaito Hikake¹, Zhuo Li¹, Junxiang Hao¹, Chitra Pandy¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

Keywords:

Oxide semiconductor,Atomic Layer Deposition,InGaOx

We have developed Atomic Layer Deposition (ALD) process of InGaOx (IGO) for transistor channel, and investigated the trade-off among mobility, electrostatics, and reliability in single-gate IGO FETs. To break the characteristics trade-off, we fabricated multi-gate nanosheet IGO FETs, and demonstrated normally-off operation, high mobility, and high reliability. This work shows the most well-balanced performance among preceding ALD IGO FETs with respect to mobility, threshold voltage, and SS, and shows the possibility of future 3D BEOL monolithic and 3D memory integration utilizing ALD IGO channel.