[22a-12J-1~8] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[22a-12J-5] Power-gating performance of nonvolatile SRAM using FinFETs for low-voltage operation

〇Yusaku Shiotsu¹, Osamu Yamazaki¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

Keywords:

Power gating,SRAM