[22a-61C-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[22a-61C-4] Development and Characterization of Minimal Metal Etching Process

〇Hiroyuki Tanaka¹, Yoshiyuki Nozawa², Toshihiro Hayami², Shiro Hara^1,3 (1.AIST, 2.SPPT, 3.MINIMAL)

Keywords:

Metal,Minimal,Etching

Wiring processing in minimal fabs has traditionally been carried out using wet etching using mixed acids to avoid plasma damage problems. In general, wet etching has an excellent selectivity with respect to the base material, but has the basic problem that pattern reproducibility is poor and impurities contained in the Al alloy tend to remain on the surface as etching residue. In response to these issues, we improved the plasma metal etching equipment and developed a process for processing Al alloys. We report on its overview and performance evaluation.