[22a-61C-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[22a-61C-9] An influence of silicon-carbon bond on B-C-Si CVD film formation process

Mana Otani¹, Mitsuko Muroi¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:

B-C-Si film,CVD,Si-C bond

An influence of silicon-carbon bond was evaluated for the B-C-Si CVD film formation. The SiC pair was taken into account as a independent chemical species for the rate process.