Presentation Information
[22p-12J-8]Study of the correlation between the bonding state and water resistance of GeO2 films
〇Keita Ishizuka1, Takumi Suzuki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech.)
Keywords:
semiconductor
GeO2 used in Ge-MOS generally has the disadvantage of being water soluble. It is known that GeO2 can be made water-resistant by reducing the ionic bonding ratio through low-temperature deposition. However, this method has the disadvantage of low insulating property because it assumes the existence of defects in the oxide film. In this study, we aim to achieve both water resistance and insulation properties, and perform two-step deposition at different temperatures to verify the results.