Session Details
[22p-12J-1~9]13.3 Insulator technology
Fri. Mar 22, 2024 1:30 PM - 3:45 PM JST
Fri. Mar 22, 2024 4:30 AM - 6:45 AM UTC
Fri. Mar 22, 2024 4:30 AM - 6:45 AM UTC
12J (Building No. 1)
Takanobu Watanabe(Waseda Univ.)
[22p-12J-1]Relationship between microscopic and macroscopic band offset and leakage current in perovskite oxide epitaxial thin films
〇Atsushi Tamura1, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
[22p-12J-2]Exploration of Elastic Properties and Atomistic Networks of Carbon-Incorporated Amorphous Silica Using a Universal Neural Network Potential
〇Hiroki Sakakima1, Keigo Ogawa1, Sakurako Miyazaki1, Satoshi Izumi1 (1.Univ. of Tokyo)
[22p-12J-3]Method for detecting SiO5 structure in potassium ion electret
〇(M1)Taiki Kirikoshi1, Yoshiki Ohata1, Masaki Araidai1,2, Takuma Ishiguro3, Hiroyuki Mitsuya3, Hiroshi Toshiyoshi4, Yasushi Shibata5, Gen Hashiguchi5, Kenji Shiraishi1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Saginomiya Seisakusho INC, 4.IIS, University of Tokyo, 5.Shizuoka Univ.)
[22p-12J-4]First-principles Study on Barrier Height of Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation
〇Hiroyuki Kageshima1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)
[22p-12J-5]Impacts of Asymmetric Distribution of Surface Potential on Conductance Curve
〇Noriyuki Taoka1, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1 (1.Aichi Inst. of Tech)
[22p-12J-6]Variation of GeO2/Ge interface properties with annealing time of Cu-PMA method
〇(M1)Kota Kanno1, Youta Uchida1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri & Tech)
[22p-12J-7]Study of solution oxidation of Ge substrate
〇Gen Shimizu1, Yuta Tsuchiya1, Hoshiki Harata1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. & Tech.)
[22p-12J-8]Study of the correlation between the bonding state and water resistance of GeO2 films
〇Keita Ishizuka1, Takumi Suzuki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech.)
[22p-12J-9]Characterization of GeO2 film by N2 annealing treatment
〇(M1)Yuta Tsuchiya1, Hazime Saito1, Yoshitaka Iwasaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri and Tech)