[22p-12J-1~9] 13.3 Insulator technology

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[22p-12J-9] Characterization of GeO₂ film by N₂ annealing treatment

〇(M1)Yuta Tsuchiya¹, Hazime Saito¹, Yoshitaka Iwasaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri and Tech)

Keywords:

annealing,Insulating Film Technology,semiconductor

The key to realize Ge-MOSFETs with high mobility is the preparation of oxide GeO2 film, since the effect of GeO desorption at the Ge/GeO2 interface on the characteristics is a practical problem. This study proposes a method to improve such problems by annealing GeO2 films deposited by thermal oxidation.