[22p-21C-1~18] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[22p-21C-16] Room-temperature PL lifetimes in the state-of-the-art three-dimensional GaN (II)

〇Shigefusa Chichibu¹, Kohei Shima¹, Akira Uedono², Shoji Ishibashi³, Ryo Tanaka⁴, Shin-ya Takashima⁴, Katsunori Ueno⁴, Masaharu Edo⁴, Hirotaka Watanabe⁵, Yoshio Honda⁵, Jun Suda⁵, Hiroshi Amano⁵, Tetsu Kachi⁵, Toshihide Nabatame⁶, Yoshihiro Irokawa⁶, Yasuo Koide⁶ (1.Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST, 4.Fuji Electric, 5.Nagoya Univ., 6.NIMS)

Keywords:

Nitride semiconductor,GaN,luminescence lifetime

Major point defect species and room-temperature photoluminescence lifetimes in the state-of-the-art GaN are introduced.