[22p-21C-1~18] 15.4 III-V-group nitride crystals

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[22p-21C-8] Effect of film thickness on GaN grown on ScAlMgO₄ substrate in electrical characterization measurement using THz Time-Domain spectroscopic Ellipsometry

〇Takashi Fujii^1,2, Watanabe Hayato¹, Tsuchida Kaito¹, Iwamoto Tohiyuki², Fukuda Tsuguo³, Deura Momoko¹, Araki Tsutomu¹ (1.Ritsumeikan Univ., 2.PNP, 3.Fkuda Cryst Lab.)

Keywords:

THz,GaN,ellipsometory

We report that THz-TDSE can be used to measure the electrical properties (electrical conductivity, carrier concentration, mobility) of GaN thin films and graphene on a single crystal substrate in a non-contact and non-destructive manner. In this study, we examined the effects of film thickness by performing THz-TDSE and Hall measurements using a sample in which GaN epitaxial films of 1 μm or less with different film thicknesses were grown on a 50 mm diameter SAM substrate by the MBE method.