[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-P04-15] Characterization of displacement currents in the I-V characteristics of Ni/n-GaN Schottky contacts

〇Hiroki Imabayashi¹, Kentaro Kawanishi¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:

Ni/n-GaN Schottky contact,reverse I-V characteristic,displacement current

In this study, we conducted I-V measurements at different voltage sweep rates for the Au/Ni/n-GaN Schottky contacts formed on the freestanding GaN substrates to analyze the displacement current. When the voltage was applied from +1 V to -100 V, a nearly constant reverse displacement current proportional to the sweep rate was observed. On the other hand, when the voltage sweep was reversed, a forward displacement current was observed. This indicates that the displacement current needs to be taken into account as the Schottky contact characteristics are improved.