[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-P04-16] Interface evaluation of SiC pMOSFET with charge pumping method

〇Kotaro Ano¹, Kuniyuki Kakushima¹, Takuya Hoshii¹, KaKazuo Tsutsui¹, Hitoshi Wakabayashi¹, Takashi Yoda¹, Takayuki Oba¹ (1.Tokyo tech.)

Keywords:

SiC-MOSFET