Presentation Information
[22p-P04-17]Double-Implanted SiC Superjunction UMOSFET to Suppress Bipolar Degradation
〇Kensuke Takenaka1, Takeshi Tawara1, Syunki Narita2, Shinsuke Harada1 (1.AIST, 2.Fuji Electric)
Keywords:
SiC,SJ,superjunction
We investigated the suppression of current degradation of trench-gate SiC superjunction MOSFETs (SiC-SJ-UMOSFETs) at current densities above 1500 A/cm2 using the double-implantation method.