[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-P04-2] Evaluation of endurance characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:

nitride semiconductor,quantum well,nonvolatile memory

Improvement of nonvolatile memory characteristics is important for realizing IoT society and Society5.0. We are studying a high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs). In this presentation, endurance characteristics of nonvolatile memory using GaN-based RTDs fabricated on Si(111) substrates are reported. In addition, possible methods to improve the endurance characteristics are explained.