[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-P04-4] Study of Vth dependence on Mg concentration of GaN MOSFETs with Al-doped channel

〇Tsurugi Kondo¹, Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric, 2.NICHe, Tohoku Univ.)

Keywords:

GaN MOSFETs,thershold voltage,Al doped channel

We investigated the Mg concentration dependence on the threshold voltage of GaN MOSFETs with Al doped channel region. V_ths changed in response to Mg concentration, V_ths=4.8 V and μ_FE=76 cm²/Vs were both achieved at Mg concentration of 3E17 cm^-3. The dependence of V_ths on Mg concentration showed almost the same tendency as the theoretical value, indicating that V_ths of GaN MOSFETs with Al doped channel region can be controled by Mg concentration.