[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-P04-5] Characterization of near-conduction-band gap state in Mg-ion-implanted GaN after two-step annealing using MOS structure

〇Uryu Ra¹, Yuki Hatakeyama¹, Masamichi Akazawa¹ (1.RCIQE,Hokkaido Univ.)

Keywords:

GaN,Mg implanted

In GaN power device applications, it is desirable to establish ion implantation techniques. In particular, the origin of defects generated by Mg ion implantation should be well investigated and a control method should be found. We have found that after Mg ion implantation, Ga interstitial atoms (Gai) can be diffused into the cap layer by long annealing at 600°C using an Al2O3 cap layer. In this report, we report the results of our investigation of the effect of two-step annealing at 600°C after ion implantation and before activation annealing at high temperature on the forbidden intraband levels using MOS structures.