[22p-P05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

[22p-P05-2] Raman analysis of 3C stacking fault in 4H-SiC epitaxial wafers

〇Yumi Madokoro¹, Noriyuki Hasuike¹, Toshiyuki Isshiki¹, Kenji Kobayashi², Takeshi Fujitani² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)

Keywords:

4H-SiC,3C stacking fault,Raman spectroscopy