Session Details
[22p-P05-1~3]15.6 Group IV Compound Semiconductors (SiC)
Fri. Mar 22, 2024 1:30 PM - 3:30 PM JST
Fri. Mar 22, 2024 4:30 AM - 6:30 AM UTC
Fri. Mar 22, 2024 4:30 AM - 6:30 AM UTC
P05 (Building No. 9)
[22p-P05-1]Simultaneous growth of 4H-SiC crystals with low BPD densities on multiple SiC wafers
〇Hiroshi Fukui1, Yuki Urata1, Yohei Okada1, Risa Miyakaze1, Shinya Matsukawa1, Kiyoshi Matsushima1, Jun Yoshikawa1 (1.NGK)
[22p-P05-2]Raman analysis of 3C stacking fault in 4H-SiC epitaxial wafers
〇Yumi Madokoro1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2, Takeshi Fujitani2 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)
[22p-P05-3]Analysis of a single Shockley stacking fault with two triangles facing each other in 4H-SiC PiN diode.
〇Chiharu Ota1, Nishio Johji1, Ryosuke Iijima1 (1.Corporate R&D Center, Toshiba)