Presentation Information
[22p-P05-3]Analysis of a single Shockley stacking fault with two triangles facing each other in 4H-SiC PiN diode.
〇Chiharu Ota1, Nishio Johji1, Ryosuke Iijima1 (1.Corporate R&D Center, Toshiba)
Keywords:
SiC,Basal dislocation,Stacking Fault
The expansion of single Schockley-type Stacking Faults (1SSF) in 4H-SiC is well known and its expansion pattern is understood to be determined by the structure and the combination of partial dislocations constituting the original basal plane dislocation (BPD). On the other hand, atypical 1SSF shapes have also been observed, and their expansion patterns are not well understood. In this study, we peformed optical and structual analysis of the expansion phenomenon of a 1SSF with two triangles facing each other, and estimated the expansion mode and the original BPD structure.