Presentation Information
[22p-P07-27]Growth of CVD graphene on high-quality Ir(111) thin films deposited by MBE
〇Eri Hashimoto1, Yuki Onuma1, Hiroto Kurosaka1, Yudai Nishio1, Fumihiko Matsui2, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.IMS)
Keywords:
CVD graphene,MBE,Ir
We deposited Ir(111) thin films by molecular beam epitaxy to improve the quality of Ir(111) thin films for substrates of CVD graphene growth. We demonstrated that Ir(111) thin films, which were deposited by MBE, had much higher surface flatness and single-crystallinity than conventional Ir thin films by sputtering methods. Furthermore, graphene was grown on Ir(111) thin films by CVD growth, indicating that Ir(111) thin films are suitable substrates for CVD growth of graphene.