The 71st JSAP Spring Meeting 2024
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Poster presentation17 Nanocarbon and Two-Dimensional Materials : 17 Nanocarbon and Two-Dimensional Materials (Poster)

[22p-P07-1~67]17 Nanocarbon and Two-Dimensional Materials (Poster)

Fri. Mar 22, 2024 4:00 PM - 6:00 PM JST
Fri. Mar 22, 2024 7:00 AM - 9:00 AM UTC
P07 (Building No. 9)

[22p-P07-1]Elucidation of dissociation process of ethanol on Co and Ir catalysts supported on Al2O3 and SiO2 by using in situ DRITFS measurement

〇Yukiya Koyama1, Takahiro Saida1,2, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Inst.)

[22p-P07-2]Effect of buffer layers on single-walled carbon nanotube growth with Co and Ir catalysts

〇(M1)Mao Yotsumoto1, Shu Matsuoka1, Takahiro Saida1,2, Yuichi Haruyama3, Shigeya Naritsuka1, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Nanomaterial Res. Center, 3.Univ. of Hyogo)

[22p-P07-3]Fabrication of Nanocarbon Hybrid Structures by using melamine foam as base

〇Moeri Sugiyama1, Kamal Sharma2, Takahiro Saida1,2, Yuichi Haruyama3, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Nanomaterial Res. Center, 3.Univ. of Hyogo)

[22p-P07-4]Orientation-controlled polymer nanofibers containing carbon nanotubes filled with iron

〇Takumi Tsunekawa1, Yuji Fujiwara1, Hideki Sato1 (1.Mie Univ.)

[22p-P07-5]The Effect of Electric Field on Carbon Nano-wall Synthesis and Applied Research

〇Miyu Kaneda1, Minami Mori2, Masakumi Takahashi1, Yukimasa Fukada3, Kenji Yoshii3, Tatsuo Fukuda3, Akitaka Yoshigoe3, Masaaki Kobata3, Naoshi Ikeda1, Jun Kano1, Tatsuo Fujii1 (1.Grad. Sch. of Env. Life. Nat. Sci. and Tech. Okayama Univ., 2.Faculty of Science, Okayama Univ., 3.JAEA)
English Presentation

[22p-P07-6]One-step process of Microwave-assisted catalytic decomposition of various plastic waste into carbon nanotubes (CNTs)

〇IPutu Abdi Karya1, Kohei Nakagawa1, Yota Kageyama2, Al Jalali Muhammad1, Takayuki Asano2, Fumihiro Nishimura3, Toyohiko Nishiumi2, yoshinori Tatematsu1, Seitaro Mitsudo2 (1.FIR, Univ. of Fukui, 2.Dept. of Appl. Phys., Univ. of Fukui, 3.HISAC, Univ. of Fukui)

[22p-P07-7]Elongation condition of carbon nanotube yarn spun using gas discharge breakdown

〇Hiroki Mannaka1, Kouhei Tomita1, Hideki Sato1 (1.Mie Univ.)
English Presentation

[22p-P07-8]Effect of thermal treatment on the electrical properties of particles composed of carbon nanobelts and C60 molecules

〇(M1C)Sayaka Hata1, Shunji Kurosu2, Kenji Motohashi1,2,3, Toru Maekawa2 (1.Toyo Univ. Grad. Sch., 2.Toyo Univ. BN Centre, 3.Toyo Univ.)

[22p-P07-9]Development of high-speed ERT system towards real-time visualization of spatial resistance distribution of carbon nanotube thin films

〇Tomoaki Yamazaki1, Keiya Minakawa1, Reiji Kaneko1, Takashi Ikuno1 (1.Tokyo Univ. of Sci.)

[22p-P07-10]Nondestructive testing of carbon nanotube thin films using EIT method

〇Keiya Minakawa1, Reiji Kaneko1, Tomoaki Yamazaki1, Kazuyasu Tokiwa1, Takashi Ikuno1 (1.Tokyo Univ. of Sci.)
English Presentation

[22p-P07-11]Multiple-step defect healing of single-walled carbon nanotubes in reactive environment

〇Man Shen1, Yuanjia Liu1, Taiki Inoue1, Yoshihiro Kobayashi1 (1.Osaka Univ. Appl Phys)

[22p-P07-12]Relationship between Diameter and Temperature Coefficient of Resistance on Semiconducting Carbon Nanotubes

〇Toshie Miyamoto1,2, Tomo Tanaka1,2, Takashi Miyazaki1,2, Megumi Kanaori2, Noriyuki Tonouchi1,2, Akinobu Shibuya1,2, Takeshi Saito2, Yuki Kuwahara2, Takeshi Hashimoto3, Ryota Yuge1,2 (1.NEC, 2.AIST, 3.Meijo Nano Carbon Co.,Ltd)

[22p-P07-13]Orientation Order Control and Electrical Characterization of Carbon Nanotube Networks

〇Norika Fukuda1, Noriyuki Tonouchi1,2, Tomo Tanaka1,2, Toshie Miyamoto1,2, Megumi Kanaori2, Ryota Yuge1,2 (1.NEC, 2.AIST)
English Presentation

[22p-P07-14]Fabrication of field-effect transistors with as-grown clean CNT channels on quartz substrates

〇weijie jia1, Taiki Sugihara1, Guangyao Zhu1, Ya Feng1, Keigo Otsuka1, Minhyeok Lee1, Rong Xiang2, Shigeo Maruyama1, Shohei Chiashi1 (1.The University of Tokyo, 2.Zhejiang University)

[22p-P07-15]Evaluation for responsiveness of hydrogen gas sensor using carbon-nanotube-composite paper with different shapes

〇Shuntaro Kubo1, Koya Arai2, Takahide Oya1 (1.Yokohama National Univ., 2.Mitsubishi Materials)

[22p-P07-16]Performance improvement of carbon nanotube composite thread transistors for logic circuit

〇Hiroki Kodaira1, Takahide Oya1 (1.Yokohama National Univ.)

[22p-P07-17]SWCNT-based Highly Conductive Polyester Fabrics for EMI Shielding

〇(M2)Yuito Horita1, Taiki Fukase1, Hibiki Kisaka1, Sho Kuromatsu1, Yusuke Sato2, Kazuyuki Endo2, Takeshi Watanabe1, Ryosuke Suga1, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.NIHON PLAST Co., LTD.)

[22p-P07-18]SWCNT-based Chipless RFID Tags Fabricated by Screen Printing

〇(M1)Hibiki Kisaka1, Taisei Watanabe1, Yuito Horita1, Sho Kuromatsu1, Takeshi Watanabe1, Ryosuke Suga1, Shinji Koh1 (1.Aoyama Gakuin Univ.)

[22p-P07-19]Thinning of MWNT wiring by focused laser thermal transfer method

〇Ryo Tagami1, Hiroaki Komatsu1, Yosuke Sugita1, Takahiro Matsunami1, Takashi Ikuno1 (1.Tokyo Univ. of Sci.)

[22p-P07-20]Characterization of soft actuator based on carbon nanotube composite papers

〇Ryodai Toyomasu1, Takahide Oya1 (1.Yokohama National Univ.)

[22p-P07-21]Development of tribo-electric nano-generator using carbon nanotube composite paper

〇Kazuki Okochi1, Takahide Oya1 (1.Yokokoku Univ.)

[22p-P07-22]Improving power generation efficiency of paper dye-sensitized solar cells using carbon nanotube composite papers by fixing multiple dyes

〇Yi Kou1, Takahide Oya1 (1.Yokohama National Univ.)

[22p-P07-23]Development of CNT-Si heterojunction solar cells with aligned CNT films

〇Motonori Nakamura1, Keigo Kawakami1, Kakeru Takahashi1, Toru Murai1, Koji Takamura1 (1.NIT, Asahikawa)

[22p-P07-24]Fabrication and characterization of perovskite solar cells using nanocarbon materials

〇Akira Hatsuta1, Moeka Taniguchi2, Hironori Ogata1,2,3 (1.Grad.Sch.Sci.,Hosei Univ, 2.Dept.Chem.Sci.and Technol.,Hosei Univ., 3.Research Center for Micro-Nano Technol.,Hosei Univ)

[22p-P07-25]Reduction of graphene oxide by soft X-ray irradiation and atomic hydrogen annealing

〇Akira Heya1, Junichi Inamoto1, Yoshiaki Matsuo1, Kazuhiro Kanda2, Koji Sumitomo1 (1.Univ. of Hyogo, 2.LASTI, Univ. of Hyogo)

[22p-P07-26]FTIR analysis of carbon films deposited by using styrene-additive HPPS plasma

Yuto Ooishi1, Atsuya Kuwada1, Ryohei Higashida1, 〇Masanori Shinohara1, Maeda Fumihiko2, Satoshi Tanaka3, Takashi Matsumoto3 (1.Fukuoka Univ., 2.Fukuoka Inst. Technol., 3.Tokyo Electron Technology Solutions Limited.)

[22p-P07-27]Growth of CVD graphene on high-quality Ir(111) thin films deposited by MBE

〇Eri Hashimoto1, Yuki Onuma1, Hiroto Kurosaka1, Yudai Nishio1, Fumihiko Matsui2, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.IMS)

[22p-P07-28]Influence of Ag doping in Cu substrates on CVD growth of graphene

〇Runa Okuda1, Shota Yokozawa1, Hiroki Hibino1 (1.Kwangaku Univ.)

[22p-P07-29]Low-temperature direct CVD growth of graphene on sapphire using ethylene

〇(M1)Takato Oda1, Yoshikazu Kawai1, Hiroki Hibino1 (1.Kwansei Gakuin Univ.)

[22p-P07-30]Fabrication of transfer-free graphene with fine width on sapphire substrates utilizing the agglomeration phenomenon of the thick Ni pattern

〇Ichiro Kato1, Toshiharu Kubo1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)

[22p-P07-31]Stacking structure analysis of graphene layers grown on h-BN flake using TEM

〇Yunosuke Miyashita1, Keichi Yanagisawa2, Hayato Watanabe1, Yuki Chigira1, Ryosuke Takatuka3, Tomofumi Ukai2, Shunji Kurosu2, Kenji Watanabe4, Takashi Taniguchi4, Taturo Hanajiri1,3,2, Toru Maekawa1,3,2, Ryota Negishi1,3,2 (1.Toyo Univ., 2.Bio-nano Electronics Research Center,Toyo Univ., 3.Graduate School of Science and Engineering, Toyo Univ., 4.NIMS)

[22p-P07-32]Analysis of optical absorption edge shift via Fermi level control observed from randomly stacked multilayer graphene

〇Takuo Mizuno1, Shogo Ikeda1, Taiki Inoue1, Yuta Nishina2, Yoshihiro Kobayashi1 (1.Osaka Univ., 2.Okayama Univ.)

[22p-P07-33]Force curve measurement in liqid on epitaxial graphene

〇Ryoma Yukawa1, Rensei Toyoda1, Kouta Hamamoto1, Yasuhide Ohno1, Masao Nagase1 (1.Tokushima Univ.)

[22p-P07-34]Reduced graphene oxide prepared under high electric field

〇Naru Sato1, Hiroyuki Yamaguchi1, Yasunori Chonan1, Koji Kotani1, Takako Komiyama1, Shigeru Yamauchi2 (1.Akita Prefectural Univ., Fac Systems Science and Technology, 2.Akita Prefectural Univ., I.W.T.)

[22p-P07-35]Increasing mobility of graphene using K-doped nano graphene as an intermediate layer

〇Yuki Okigawa1, Tomoaki Masuzawa2, Takatoshi Yamada1 (1.AIST, 2.Shizuoka Univ.)

[22p-P07-36]Fabrication and characterization of bromine-doped graphene

〇Tomoaki Masuzawa1, Yuki Okigawa2, Takatoshi Yamada2 (1.Shizuoka Univ., 2.AIST)

[22p-P07-37]Improved Graphene Mediated Surface-Enhanced Raman Scattering (G-SERS) Substrates

〇Yanjun Heng1, Kano Aizawa1, Yukino Hamada1, Hirokazu Fukidome2, Chao Tang2, Akira Satou2, Taiichi Otsuji2, Takashi Uchino1 (1.Tohoku Inst. Tech., 2.Tohoku Univ.)

[22p-P07-38]Ionic Permeation in Solution-Gated Graphene FETs for Drift Suppression

〇Shota Ushiba1, Yuka Tokuda1, Tomomi Nakano1, Takao Ono2, Shinsuke Tani1, Masahiko Kimura1, Kazuhiko Matsumoto2 (1.Murata Manufacturing, 2.SANKEN, Osaka Univ.)

[22p-P07-39]Drift and Hysteresis Evaluation of Electro-optic Properties of Graphene

〇Hiroki Sato1, Shota Ushiba1, Shinsuke Tani1, Masahiko Kimura1 (1.Murata Manufacturing)

[22p-P07-40]Fabrication of various sulfide thin films via reactive sputtering with sulfur plasma

〇ISSEI SUZUKI1, Daiki Motai1, Taichi Nogami1, Takahisa Omata1 (1.Tohoku Univ.)

[22p-P07-41]MoS2 synthesis using MoO3 thin film by sputtering method

〇Satoshi Kimura1, Atsushi Ando2, Shinichi Yamamoto1 (1.Ryukoku univ., 2.AIST)

[22p-P07-42]CVD synthesis of WS 2 using drop-casting method

〇Mizuki Tanaka1, Satoshi Kimura1, Atushi Andou2, Shin-ichi Yamamoto1 (1.Ryukoku Univ., 2.AIST)

[22p-P07-43]Large-Scale growth of Mo6Te6 nanowires by chemical vapor deposition method

〇Shintaro Saito1, Itsuki Yamada1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)

[22p-P07-44]Effect of cooling rate on CVD growth of multilayer h-BN

〇(M1)Shota Yokozawa1, Tsubasa Nojima1, Hiroki Hibino1 (1.Kwansei Gakuin Univ.)

[22p-P07-45]Crystal growth of hexagonal boron nitride on dielectric surface without transition metal catalysts

〇Yukihiro Muta1, Masahito Sugiura1, Takashi Matsumoto1 (1.Tokyo Electron Technology Solutions ltd.)

[22p-P07-46]Synthesis of thin film from hexagonal boron nitride powder and formation of layered structure with graphene oxide

〇Seiji Obata1, Yuta Nishina1 (1.Okayama Univ. RCIS)

[22p-P07-47]Development of a system to efficiently fabricate large area monolayer semiconductors by robotic technology

〇Wataru Idehara1, Keisuke Shinokita1, Kazunari Matsuda1, Fan Yang1 (1.IAE, Kyoto Univ.)

[22p-P07-48]Anisotropic wet etching of TMD multilayers by using photo-induced carriers

〇Shuto Muranaka1, Naoto Horikawa1, Ryousuke Ishikawa1, Yusuke Hoshi1 (1.Tokyo City Univ.)

[22p-P07-49]Characterization of a 2D material–3D metal Interface by Kelvin Probe Force Microscopy

〇Mitsuhiro OKADA1, Yuki Okigawa1, Takahiko Endo2, Wen Hsin Chang1, Naoya Okada1, Yasumitsu Miyata2, Toshitaka Kubo1, Toshifumi Irisawa1, Takatoshi Yamada1 (1.AIST, 2.Tokyo Metropolitan Unv.)

[22p-P07-50]Analysis of the shoulder peak of Raman spectrum of CVD-grown multilayer hBN

〇Takara Okonai1, Pablo Solis-Fernandez2, Fukamachi Satoru2, Hiroki Ago1,2 (1.Kyushu Univ., 2.Kyushu Univ. GIC)

[22p-P07-51]Twisted bilayer MoS2 formation by cohesive motion of spontaneously formed liquid droplet

〇Shotaro Yotsuya1, Mina Maruyama2, Susumu Okada2, Takahiko Endo3, Yasumitsu Miyata3, Limi Chen4, Yoshifumi Oshima4, Daisuke Kiriya1 (1.Univ. Tokyo, 2.Univ. of Tsukuba, 3.Tokyo Metro. Univ., 4.JAIST)

[22p-P07-52]Local tuning of the PL intensity of MoS2 using a metal-insulator transition material

〇(B)Koyo Nakayama1, Shota Toida2, Takahiko Endo1, Mitsuru Inada1, Shingo Sato1, Takashi Taniguchi3, Kenji Watanabe3, Yoshimitsu Miyata2, Kazunari Matsuda4, Mahito Yamamoto1 (1.Kansai Univ., 2.Tokyo Metropolitan Univ., 3.NIMS., 4.Kyoto Univ.)

[22p-P07-53]Optical characteristic of monolayer WSe2 coupled with Mie-resonant silicon nanoparticles

〇Shuto Oh1, Keisuke Shinokita1, Hiroshi Sugimoto2, Minoru Fujii2, Kazunari Matsuda1 (1.IAE, Kyoto Univ., 2.Kobe Univ.)

[22p-P07-54]Z-scheme SnS2/g-C3N4 photocatalyst for artificial photosynthesis

〇Yohei Mori1, Malathi Baskar1, Santhanakrishnan Harish2, Navaneethan Mani2, Atsushi Nakamura1 (1.Shizuoka Univ., 2.SRM Inst.)

[22p-P07-55]Surface modification on WSe2 by ozone treatment and vacuum annealing for atomic layer deposition

〇Takuya Kojima1, Daisuke Horiba1, Mengnan Ke1, Nobuyuki Aoki1 (1.Chiba Univ.)

[22p-P07-56]Photon-enhanced thermionic emission properties of 2D-MoS2 surface activated with cesium and oxygen

〇Yuki Goto1, Akihisa Ogino1 (1.Shizuoka Univ.)
English Presentation

[22p-P07-57]Electric-field Sensor based on MoS2 for Lightning Forecast

〇Jiali Hu1, Razzakul Islam Mohammad1, Afsal Kareekunnam1, Kuki Akihiro1, Takeshi Kudo2, Takeshi Maruyama2, Masashi Akabori1, Hiroshi Mizuta1,3 (1.Japan Advanced Institute of Science and Technology, 2.Otowa Electric Co., Ltd., 3.University of Southampton)
English Presentation

[22p-P07-58]Modulation of Hysteresis in MoS2 MOSFET through Inorganic Molecular Doping toward memristive behavior

〇(P)Elamaran Durgadevi1, Daisuke Kiriya1 (1.The Univ. of Tokyo)

[22p-P07-59]Effects of thermal annealing on the electrical properties of single-layer 2H-MoTe2 channel FETs

〇Hiroshi Shigeno1, Rikuto Yamamura1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Hoshi1 (1.Tokyo City Univ., 2.NIMS)
English Presentation

[22p-P07-60]Performance Analysis of MoS2/WSe2 Complementary Field-Effect Transistors

Yeasin Arafat Pritom1, 〇Abdul A Kuddus2, Jaker Hossain3, Md Rasidul Islam4, Shinichiro Mouri2, Mainul Hossain1 (1.Univ. of Dhaka, 2.Ritsumeikan Univ., 3.Univ. of Rajshahi, 4.BSFMST Univ.)

[22p-P07-61]Formation of TaOx from TaS2 by O3 oxidation for the gate insulator application

〇(B)YUTARO SAHASHI1, MITSURU INADA1, SHINGO SATO1, KEIJI UENO2, MAHITO YAMAMOTO1 (1.Kansai Univ, 2.Saitama Univ)

[22p-P07-62]Dirac-Source Field-Effect Transistor Based on WSe2

〇(B)Sei Hosomi1, Mitsuru Inada1, Shingo Sato1, Hiroshi Tani1, Takashi Taniguchi2, Kenji Watanabe2, Keiji Ueno3, Mahito Yamamoto1 (1.Kansai Univ., 2.NIMS, 3.Saitama Univ.)

[22p-P07-63]Study on vertical TFET with MoTe2/p-Ge and MoTe2/p ++-Si hetero structure

〇Koya Kudo1, Yuga Nakamura1, Nobuyuki Aoki1, Mengnan Ke1 (1.chiba university)

[22p-P07-64]Temperature dependence of the photogating effect of a WSe2/WOx heterostructure

〇(B)Hitomi Kanaya1, Mitsuru Inada1, Takashi Taniguchi2, Kenji Watanabe2, Keiji Ueno3, Mahito Yamamoto1 (1.Kansai Univ., 2.NIMS, 3.Saitama Univ.)

[22p-P07-65]Dependence of electrode materials on the ReRAM operation of WSe2/WOx

〇(B)Shuhei Fukushima1, Mitsuru Inada1, Keiji Ueno2, Mahito Yamamoto1 (1.Kansai Univ, 2.Saitama Univ)

[22p-P07-66]Synthesis of few-layer hexagonal boron nitride and application to magnetic tunnel junction devices

〇Satoru Emoro1, Kusunose Hiroki1, Shunsuke Masuda1, Satoru Fukamachi2, Yung-Chang Lin3, Kazu Suenaga4, Takashi Kimura5, Hiroki Ago1,2 (1.Kyushu Univ., 2.Kyushu Univ. GIC, 3.AIST, 4.Osaka Univ., 5.Kyushu Univ. Sci.)
English Presentation

[22p-P07-67]Application of Monoatomic Boron Vacancy of Hexagonal Boron Nitride as Ultra-thin Van der Waals Magnetic Tunnel Junction

〇(DC)Halimah Harfah1, Yusuf Wicaksono2, Gagus K. Sunnardianto3, Muhammad A. Majidi5, Koichi Kusakabe4 (1.Osaka Univ, 2.RIKEN CPR, 3.BRIN Indonesia, 4.Hyogo Univ., 5.Univ. Indonesia)
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