Presentation Information
[22p-P07-30]Fabrication of transfer-free graphene with fine width on sapphire substrates utilizing the agglomeration phenomenon of the thick Ni pattern
〇Ichiro Kato1, Toshiharu Kubo1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)
Keywords:
graphene,FET,the metal agglomeration phenomenon
We have previously reported that transfer-free graphene can be formed on insulating substrates by using a metal catalyst aggregation technique. We have also fabricated FETs using transfer-free graphene and confirmed the modulation of drain current by gate voltage. In this study, to improve the electrical properties of graphene, we attempted to fabricate submicron spaced Ni patterns with thicker Ni patterns and to pass current vertically through the transfer-free graphene fabricated between the patterns.