Presentation Information
[22p-P07-45]Crystal growth of hexagonal boron nitride on dielectric surface without transition metal catalysts
〇Yukihiro Muta1, Masahito Sugiura1, Takashi Matsumoto1 (1.Tokyo Electron Technology Solutions ltd.)
Keywords:
2D material,CFET,h-BN
In many cases, h-BN is formed by using a transition metal catalyst such as Fe, Ni or Cu to grow crystals on a metal film. But from the viewpoint of impurity control in the logic device manufacturing process, It is not preferable to use the metal for purposes other than forming the element. In this presentation, we will report that we have developed a technology for directly growing h-BN crystals on insulating films using a microwave plasma CVD system without transition metal catalysts.