Presentation Information
[22p-P07-52]Local tuning of the PL intensity of MoS2 using a metal-insulator transition material
〇(B)Koyo Nakayama1, Shota Toida2, Takahiko Endo1, Mitsuru Inada1, Shingo Sato1, Takashi Taniguchi3, Kenji Watanabe3, Yoshimitsu Miyata2, Kazunari Matsuda4, Mahito Yamamoto1 (1.Kansai Univ., 2.Tokyo Metropolitan Univ., 3.NIMS., 4.Kyoto Univ.)
Keywords:
2D semiconductor,MoS2,VO2
Single layers of transition metal dichalcogenides (TMDCs), which are direct band gap semiconductors, show strong photoluminescence (PL) originating from tightly bound excitons. Additionally, the PL properties can be controlled by external influences such as electric fields and doping, making them promising for a variety of photonic applications such as LEDs. In this study, we attempted to control the PL properties of single-layer MoS2 by using VO2, which undergoes an insulator-metal phase transition with a structural phase transition at ~340 K, as a substrate.