Presentation Information
[22p-P07-55]Surface modification on WSe2 by ozone treatment and vacuum annealing for atomic layer deposition
〇Takuya Kojima1, Daisuke Horiba1, Mengnan Ke1, Nobuyuki Aoki1 (1.Chiba Univ.)
Keywords:
2D materials,Transition metal dichalcogenides,UV ozone exposure
Among 2D semiconductors, ozone exposure to WSe2, a promising p-type channel material, shows a p-type doping effect and shifts the threshold voltage to the + side. Vacuum heating after exposure decreases the on-current due to oxygen desorption. The characteristics after repeating this treatment for 60 min showed a p-type doping effect than before the treatment. In order to clarify these property changes, including observations by X-ray photoelectron spectroscopy and atomic force microscopy, the surface modification and its effectiveness for ALD are discussed.