Presentation Information
[22p-P07-60]Performance Analysis of MoS2/WSe2 Complementary Field-Effect Transistors
Yeasin Arafat Pritom1, 〇Abdul A Kuddus2, Jaker Hossain3, Md Rasidul Islam4, Shinichiro Mouri2, Mainul Hossain1 (1.Univ. of Dhaka, 2.Ritsumeikan Univ., 3.Univ. of Rajshahi, 4.BSFMST Univ.)
Keywords:
TMDC,MoS2,CFET
In this study, TCAD simulations were utilized to demonstrate the electrical parameters of MoS2/WSe2 CFET devices including high ION/IOFF ratio, SS, DIBL, and Vth. The transfer characteristics of the proposed MoS2/WSe2 CFET were determined at different LG = 50 nm, 70 nm, 90 nm, and 110 nm with drain voltage VD = 1 V and 0.5 V. The ON current (ION) ~300 µA µm was obtained with the prime ION/IOFF ratio of the order of 10^5 in both MoS2 and WSe2-channel FETs at a channel length of 110 nm, with the lowest Vth of 0.2 V. For LG = 110 nm, MoS2 shows the minimum DIBL of 49 mV/V while 58 mV/V for WSe2 device. A reduced SS ranging between 138 mV/decade (LG = 50 nm) to 93.7 mV/decade (LG =110 nm) refers to a sharp steep switching behavior in MoS2. For the same gate lengths, the steep-switching behavior in MoS2 was found superior compared to WSe2, with SS = 142 mV/decade (LG = 50 nm) and 103 mV/decade (LG = 110 nm). Thus, these outcomes demonstrate a high ION, excellent ION/IOFF ratio, SS, DIBL, and Vth of MoS2/WSe2 CFET devices. The results coupled with the atomically thin MoS2 and WSe2 pave opportunities to be potentially integrated in the next generation of emerging CFET devices.