講演情報
[22p-P07-60]Performance Analysis of MoS2/WSe2 Complementary Field-Effect Transistors
Yeasin Arafat Pritom1, 〇Abdul A Kuddus2, Jaker Hossain3, Md Rasidul Islam4, Shinichiro Mouri2, Mainul Hossain1 (1.Univ. of Dhaka, 2.Ritsumeikan Univ., 3.Univ. of Rajshahi, 4.BSFMST Univ.)
キーワード：
TMDC、MoS2、CFET
In this study, TCAD simulations were utilized to demonstrate the electrical parameters of MoS2/WSe2 CFET devices including high ION/IOFF ratio, SS, DIBL, and Vth. The transfer characteristics of the proposed MoS2/WSe2 CFET were determined at different LG = 50 nm, 70 nm, 90 nm, and 110 nm with drain voltage VD = 1 V and 0.5 V. The ON current (ION) ~300 µA µm was obtained with the prime ION/IOFF ratio of the order of 10^5 in both MoS2 and WSe2-channel FETs at a channel length of 110 nm, with the lowest Vth of 0.2 V. For LG = 110 nm, MoS2 shows the minimum DIBL of 49 mV/V while 58 mV/V for WSe2 device. A reduced SS ranging between 138 mV/decade (LG = 50 nm) to 93.7 mV/decade (LG =110 nm) refers to a sharp steep switching behavior in MoS2. For the same gate lengths, the steep-switching behavior in MoS2 was found superior compared to WSe2, with SS = 142 mV/decade (LG = 50 nm) and 103 mV/decade (LG = 110 nm). Thus, these outcomes demonstrate a high ION, excellent ION/IOFF ratio, SS, DIBL, and Vth of MoS2/WSe2 CFET devices. The results coupled with the atomically thin MoS2 and WSe2 pave opportunities to be potentially integrated in the next generation of emerging CFET devices.