Presentation Information

[22p-P07-61]Formation of TaO_x from TaS₂ by O₃ oxidation for the gate insulator application

〇(B)YUTARO SAHASHI¹, MITSURU INADA¹, SHINGO SATO¹, KEIJI UENO², MAHITO YAMAMOTO¹ (1.Kansai Univ, 2.Saitama Univ)

Keywords:

2D material,high-k gate insulator,TaS2

Fabrication of ultra-thin high-k gate oxides is one of the key challenges in scaling of FETs. Previously, some attempts have been made to form ultra-thin and high-k gate oxides by oxidation of 2D materials. In this study, we demonstrated the oxidation of TaS2 by ozone treatment and explored its potential application as a gate insulator for 2D material semiconductor FETs.

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Presentation Information

[22p-P07-61]Formation of TaOx from TaS2 by O3 oxidation for the gate insulator application

Keywords:

[22p-P07-61]Formation of TaO_x from TaS₂ by O₃ oxidation for the gate insulator application