Presentation Information
[22p-P07-62]Dirac-Source Field-Effect Transistor Based on WSe2
〇(B)Sei Hosomi1, Mitsuru Inada1, Shingo Sato1, Hiroshi Tani1, Takashi Taniguchi2, Kenji Watanabe2, Keiji Ueno3, Mahito Yamamoto1 (1.Kansai Univ., 2.NIMS, 3.Saitama Univ.)
Keywords:
2-D semiconductor,Dirac-Source FET,Graphene
The theoretical lower limit of subthreshold swing (SS) in MOSFETs is predicted to be 60 mV/dec. at room temperature, and breaking through this theoretical limit has been a challenge to achieve low power consumption of FETs. In recent years, research on FETs that are not bound by this "60 mV/dec. limit" has been active, and Dirac source FETs (DS-FETs) that use graphene, a Dirac electron system, as a source have attracted particular attention. In this study, we attempted to fabricate a DS-FET by using a WSe2 atomic layer, which exhibits both n-type and p-type polarity, as a channel.