[22p-P07-1~67] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[22p-P07-65] Dependence of electrode materials on the ReRAM operation of WSe₂/WO_x

〇(B)Shuhei Fukushima¹, Mitsuru Inada¹, Keiji Ueno², Mahito Yamamoto¹ (1.Kansai Univ, 2.Saitama Univ)

Keywords:

two dimensional semiconductor,Resistive random access memory,WSe2

Resistive random access memory(ReRAM) is a two-terminal nonvolatile memory consisting of, for example, a thin oxide sandwiched between electrodes. Recently, two-dimensional materials have been attracting attention as an active layer for ReRAM. We have attempted to apply ultra-thin WOx films obtained by ozone treatment of two-dimensional WSe2 to ReRAM. In this research, we fabricated WSe2/WOx ReRAM using Ni and Ag as electrodes and found differences in the operating mechanism depending on the electrode material.