[23a-12J-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-12J-1] A Trial of Direct MOSFET Series Resistance Variability Measurement

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo)

Keywords:

Series resistance extraction,Variability,MOSFET

Possibility of direct series resistance variability measurement by using a single device extraction method recently proposed was examined. It was confirmed that correlation between extracted resistance and other device parameters is inconsistent, indicating that the direct measurement fails. Based on the results, it is pointed out that reduction of all kinds of variability by averaging is necessary for the method to work properly.