Presentation Information
[23a-12J-10]High-accuracy charge transfer using dynamic gate compensation in a Si quantum dot
〇Gento Yamahata1, Akira Fujiwara1 (1.NTT BRL)
Keywords:
silicon,single electron,quantum dot
High-accuracy single-charge pumping with high device yield is required for current standard application. Here, we achieved several orders of magnitude improvement in pumping accuracy by using dynamic gate-compensation technique, which suppressed the potential rise of the quantum dot in the silicon single-charge pump by applying two clock signals with opposite polarity. This useful technique can be used to achieve a high accuracy suitable for the metrological applications.