[23a-12J-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-12J-2] Theoretical Consideration of Subthreshold Characteristics of MOSFETs in mK Range

〇Hidehiro Asai¹, Hiroshi Oka¹, Takumi Inaba¹, Shunsuke Shitakata¹, Hitoshi Yui¹, Hiroshi Fuketa¹, Shota Iizuka¹, Kimihiko Kato¹, Takashi Nakayama¹, Takahiro Mori¹ (1.AIST)

Keywords:

semiconductor,cryoCMOS,subthreshold characteristic

In this study, we developed a new model for band-edge states which trap semiconductor carriers, and performed simulation of SS chararcteristics in cryogenic MOSFET.