[23a-12J-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-12J-9] Preliminary investigation toward characterizing variation in silicon qubits

〇Kimihiko Kato¹, Hidehiro Asai¹, Hiroshi Oka¹, Shota Iizuka¹, Hiroshi Fuketa¹, Takumi Inaba¹, Takahiro Mori¹ (1.AIST)

Keywords:

quantum bit,variation,simulation

Silicon spin quantum bit (qubit) with a fin-shaped channel and multi-gate is a promising candidate to realize highly-integrated qubit arrays for future quantum computers. In order to achieve high fidelity in quantum bit operations, accurate control of potential valleys and barriers in the Si fin without variability is essential by using voltages applied on the multi-gate. However, today, even evaluation methods of the variability are not discussed enough. In this study, therefore, we have performed a preliminary investigation toward characterizing the variation in silicon qubit performances based on the device simulation.