[23a-21C-1~9] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-21C-2] Proposal of reverse-tapered etching for selectively-area grown crystals for the formation of GaN positive-bevel edge terminations

〇Takayoshi Oshima¹, Masataka Imura¹, Yuichi Oshima¹, Toshiyuki Oishi² (1.NIMS, 2.Saga Univ.)

Keywords:

GaN,reverse taper