The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[23a-21C-1~9]15.4 III-V-group nitride crystals

Sat. Mar 23, 2024 9:00 AM - 11:30 AM JST
Sat. Mar 23, 2024 12:00 AM - 2:30 AM UTC
21C (Building No. 2)
Narihito Okada(Yamaguchi Univ.), Kohei Ueno(Univ. of Tokyo)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-21C-1]Variation of chemical states and CV property of m-GaN caused by surface treatments

〇Masatomo Sumiya1, Yasutaka Tsuda2, Masato Sumita3, Yoshitaka Nakano4, Akitaka Yoshigoe2 (1.NIMS, 2.JAEA, 3.RIKEN AIP, 4.Chubu Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-21C-2]Proposal of reverse-tapered etching for selectively-area grown crystals for the formation of GaN positive-bevel edge terminations

〇Takayoshi Oshima1, Masataka Imura1, Yuichi Oshima1, Toshiyuki Oishi2 (1.NIMS, 2.Saga Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[23a-21C-3]Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping

〇Takeru Kumabe1, Akira Yoshikawa2,3, Seiya Kawasaki1, Maki Kushimoto1, Yoshio Honda3,4,5, Manabu Arai3, Jun Suda1,3, Hiroshi Amano3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.Asahi Kasei Corp., 3.IMaSS Nagoya Univ., 4.D Center Nagoya Univ., 5.IAR Nagoya Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-21C-4]Fabrication of Al-rich AlGaN multi-channel diodes via sputtering

〇Takao Kozaka1, Ryota Maeda1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-21C-5]Growth of N-polar AlN and GaN/AlN heterrostructure

〇(M1C)Itsuki Furuhashi1, Markus Pristovsek2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-21C-6]Metalorganic Vapor Phase Epitaxy of Interlayer-free GaN Polarity Inverted Structure

〇Kazuhisa Ikeda1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Osaka Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-21C-7]Non-destructive identification of pure threading screw dislocations in GaN crystal

〇Shunta Harada1, Michio Kawase1, Keisuke Seo1, Yasutaka Matsubara1, Seiya Mizutani2, Yuya Mizutani2, Seiji Mizutani2, Kenta Murayama2 (1.Nagoya Univ., 2.Mipox Corp.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-21C-8]Electrical property evaluation of carbon-doped OVPE-GaN

〇Shigeyoshi Usami1, Ritsuko Higashiyama1, Masayuki Imanishi1, Junichi Takino2, Tomoaki Sumi2, Yoshio Okayama2, Masashi Yoshimura3, Masahiko Hata4, Msashi Isemura5, Yusuke Mori1 (1.Osaka Univ., 2.Panasonic Holdings Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-21C-9]Effects of reactor pressure on TMGa decomposition and carbon incorporation in GaN MOVPE

〇Hirotaka Watanabe1, Shugo Nitta1, Naoki Fujimoto1, Seiya Kawasaki2, Takeru Kumabe2, Yoshio Honda1, Hiroshi Amano1,3,4 (1.Nagoya Univ. (NU) IMaSS, 2.Dept. of Electronics.Nagoya Univ. (NU), 3.D center. Nagoya Univ. (NU), 4.IAR.Nagoya Univ. (NU))
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