Presentation Information

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[23a-21C-3]Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping

〇Takeru Kumabe¹, Akira Yoshikawa^2,3, Seiya Kawasaki¹, Maki Kushimoto¹, Yoshio Honda^3,4,5, Manabu Arai³, Jun Suda^1,3, Hiroshi Amano^3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.Asahi Kasei Corp., 3.IMaSS Nagoya Univ., 4.D Center Nagoya Univ., 5.IAR Nagoya Univ.)

Keywords:

Aluminum nitride,p-n diodes,Polarization engineering

AlN and high-Al-content AlGaN are garnering significant attention as materials for next-generation electronic devices. While the p-n junction is a fundamental component of semiconductor devices, AlN-based p-n diodes have not yet exhibited ideal electrical properties, primarily due to challenges in controlling conductivity through conventional impurity doping. In this study, we demonstrated near-ideal AlN-based vertical p-n diodes without any dopant. The polarization effects inherent in nitride semiconductors are engineered to control fixed charges and the built-in potential within the p-n junction.

Back to Session information