[23a-21C-1~9] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-21C-5] Growth of N-polar AlN and GaN/AlN heterrostructure

〇(M1C)Itsuki Furuhashi¹, Markus Pristovsek² (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

N-polar,Growth crystals

N-polar high electron mobility transistors(HEMT) is considered as a more high frequency devices, but it has some problems about N-polar nitrides growth.In this presentation, we talk about growth of N-polar AlN and GaN/AlN heterostructure, especially, surface morphology.