[23a-21C-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-21C-7] Non-destructive identification of pure threading screw dislocations in GaN crystal

〇Shunta Harada¹, Michio Kawase¹, Keisuke Seo¹, Yasutaka Matsubara¹, Seiya Mizutani², Yuya Mizutani², Seiji Mizutani², Kenta Murayama² (1.Nagoya Univ., 2.Mipox Corp.)

Keywords:

Threading dislocation,X-ray topography,Polarized light observation

GaN contains a significant number of threading dislocations, among which pure threading screw dislocations without edge components have been reported as the initiation points of leakage. We have applied the evaluation technique that combines X-ray topography and polarized light observation, previously established for observing threading dislocations in SiC substrates, to GaN. This approach has demonstrated the feasibility of non-destructively identifying pure threading screw dislocations within GaN crystals.