[23a-21C-1~9] 15.4 III-V-group nitride crystals

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-21C-9] Effects of reactor pressure on TMGa decomposition and carbon incorporation in GaN MOVPE

〇Hirotaka Watanabe¹, Shugo Nitta¹, Naoki Fujimoto¹, Seiya Kawasaki², Takeru Kumabe², Yoshio Honda¹, Hiroshi Amano^1,3,4 (1.Nagoya Univ. (NU) IMaSS, 2.Dept. of Electronics.Nagoya Univ. (NU), 3.D center. Nagoya Univ. (NU), 4.IAR.Nagoya Univ. (NU))

Keywords:

semiconductor,Metal Organic Chemical Vapor Epitaxy,impurity