[23a-22A-1~7] 15.5 Group IV crystals and alloys

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-22A-6] Suppression of crack generation in strained SiGe on Ge-on-Si(111) by selective ion implantation

〇Masaki Nagao¹, Ayaka Odashima¹, Takahiro Inoue¹, Michihiro Yamada^2,3, Kohei Hamaya^2,4, Kentaro Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.OTRI, Osaka Univ.)

Keywords:

strained Silicon Germanium,crystal growth,ion implantation