Presentation Information

[23a-52A-1]Formation of Alternating Epitaxial Stacked Structures of 3C-SiC and 4H-SiC

〇Hiroyuki Nagasawa1, Michimasa Musya2, Masao Sakuraba2, Shigeo Sato2 (1.CUSIC Inc., 2.Tohoku Univ. RIEC)


SiC,Hetero Epitaxy,Coherent Interface

We have developed the SLE (Simultaneous Lateral Epitaxy) method and established a Singl-domain 3C-SiC epitaxial growth technique on 4H-SiC formaing a coherent interface.In this study, we further improved the SLE method and realized 4H-SiC epitaxial growth on 3C-SiC layers for the first time in the world. Evaluation using SEM, EBSD and TEM support the formation of 4H-SiC/3C-SiC/4H-SiC stacked structures. All hetero-interfaces maintain a coherency. We believe this technology provides more flexibility in device design.
In the presentation, we will figure out the mechanism of 4H-SiC epitaxial growth on 3C-SiC and its controlavility.