[23a-52A-1~9] 15.6 Group IV Compound Semiconductors (SiC) | The 71st JSAP Spring Meeting 2024

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Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[23a-52A-1~9]15.6 Group IV Compound Semiconductors (SiC)

Sat. Mar 23, 2024 9:00 AM - 11:30 AM JST
Sat. Mar 23, 2024 12:00 AM - 2:30 AM UTC

52A (Building No. 5)

Chiharu Ota(東芝)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-52A-1]Formation of Alternating Epitaxial Stacked Structures of 3C-SiC and 4H-SiC

〇Hiroyuki Nagasawa¹, Michimasa Musya², Masao Sakuraba², Shigeo Sato² (1.CUSIC Inc., 2.Tohoku Univ. RIEC)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[23a-52A-2]Numerical Investigation on Critical Conditions for the Step Instability in Solution Growth of SiC

〇Xin Liu¹, Toru Ujihara¹ (1.IMaSS Nagoya Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[23a-52A-3]Effect of Growth Pressure and Temperature on Growth Rate of SiC Sublimation Process

〇Shin-ichi Nishizawa¹, Wataru Saito¹ (1.Kyushu Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-52A-4]Optimization of impurity concentrations in fluorescent SiC doped with boron and nitrogen

〇Takuma Ban¹, Shota Akiyoshi¹, Taisei Mizuno¹, Naoki Takahashi¹, Eri Akazawa², Atsushi Suzuki², Weifang Lu³, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Xiamen Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-52A-5]Optical properties on hybrid-type white LED using porous and fluorescent SiC

〇(M1)Taisei Mizuno¹, Shota Akiyoshi¹, Naoki Takahashi¹, Takuma Ban¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Atsushi Suzuki², Eri Akazawa², Yiyu Ou³, Haiyan Ou³, Jiachen Wang³ (1.Meijo Univ., 2.E&E Corp., 3.Technical Univ. Denmark)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-52A-6]Density control of single-photon sources formed at a SiO₂/SiC interface

〇Mitsuaki Kaneko¹, Hideaki Takashima^1,2, Konosuke Shimazaki¹, Shigeki Takeuchi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.CIST)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-52A-7]ODMR characteristics of silicon vacancies in isotopically purified 4H-SiC

〇Kosuke Yamashiro^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shengjie Zhang^1,2, Yuichi Yamazaki², Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-52A-8]Reduction of 1SSF expansion rate of basal plane dislocation in 4H-SiC under UV illumination after hydrogen ion implantation

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-52A-9]Impacts of single Shockley-type stacking faults in blocking-voltage layer on electrical characteristics of 4H-SiC PiN diodes

〇Satoshi Asada¹, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

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