[23a-52A-1~9] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[23a-52A-3] Effect of Growth Pressure and Temperature on Growth Rate of SiC Sublimation Process

〇Shin-ichi Nishizawa¹, Wataru Saito¹ (1.Kyushu Univ.)

Keywords:

SiC,Wafer,Growth Rate

In order to realize the social implementation of SiC power devices, it is important to establish and improve the manufacturing technology of SiC wafers, which are the starting material. Here, we will discuss the sublimation method from the perspective of improving manufacturing efficiency, and report on quantitatively examining the relationship between growth rate, growth pressure, and temperature using numerical analysis.