[23a-52A-1~9] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-52A-6] Density control of single-photon sources formed at a SiO₂/SiC interface

〇Mitsuaki Kaneko¹, Hideaki Takashima^1,2, Konosuke Shimazaki¹, Shigeki Takeuchi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.CIST)

Keywords:

SiC,SPS,Interface defect