Presentation Information

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-52A-7]ODMR characteristics of silicon vacancies in isotopically purified 4H-SiC

〇Kosuke Yamashiro^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shengjie Zhang^1,2, Yuichi Yamazaki², Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

Keywords:

quantum sensor,silicon vacancy,ODMR

Negatively charged silicon vacancies (V_Si^-) in silicon carbide have potential applications in "quantum sensors" that can detect magnetic fields and temperature with high sensitivity. Since the performance of quantum sensors is determined by the number of quantum sensors and their coherence time, it is necessary to maximize the number of quantum sensors while maintaining the coherence time. In this study, we prepared ¹²C-enriched 4H-SiC epitaxial films and investigated the photodetected magnetic resonance properties of VSi- formed by high-energy electron irradiation.

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