[23a-52A-1~9] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-52A-9] Impacts of single Shockley-type stacking faults in blocking-voltage layer on electrical characteristics of 4H-SiC PiN diodes

〇Satoshi Asada¹, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

Keywords:

SiC,Stacking Faults,PiN Diodes