Presentation Information
[23a-P06-22]Elucidation of degradation characteristics of Pt/Nb:SrTiO3 Interface ReRAM by analyzing interface levels.
〇(B)Tomohiro Ishii1, Hayato Nakamura1, Ryosuke Otani1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci)
Keywords:
Schottky Junction,Interface States,Resistive Random-Access Memory
This study investigates the degradation mechanism of interface ReRAM using Pt/Nb-doped SrTiO3 junctions. Devices were fabricated by sputtering Pt upper electrodes and Ti/Pt lower electrodes on Nb:STO single crystal substrates. Electrical characteristics were assessed through current-voltage (I-V) measurements using a Source Measure Unit, and interface states were evaluated via Isothermal Capacitance Transient Spectroscopy (ICTS). I-V characteristics displayed increased resistance after several cycles. ICTS analysis showed a change in interface trap levels, indicating their impact on I-V characteristics. This suggests that interface traps significantly affect the ReRAM's performance, providing insights for future design and improvement.