[23a-P07-1~19] 6.4 Thin films and New materials

[23a-P07-15] Study on non-volatile control in IMT of VO₂ films through crystallization and re-amorphization of capping GST layer

〇Takuto Ohnuki¹, Yiqi Liu², Yamato Nawa², Kunio Okimura^1,2, Shoya Inagaki³, Yuji Muraoka⁴, Joe Sakai⁵, Masashi Kuwahara⁶, Aiko Narazaki⁶ (1.Graduate School of Engineering,Tokai Univ., 2.School of Engineering,Tokai Univ., 3.Okayama Univ., 4.RIIS, Okayama Univ., 5.Toshima Manufacturing Co., Ltd., 6.AIST Institute.)

Keywords:

vanadium dioxide,GST

VO2 is a phase change material that exhibits an insulator-metal transition (IMT) at 68℃.IMT is induced by external stimuli such as temperature rise, and its electrical and optical properties change at this time. Therefore, it is expected to be applied to various devices. However, VO2 has the problem that the induced metal phase is lost when the external stimulus is removed. Therefore, GST, which causes volume contraction during phase change, is In this study, we attempted to modulate the IMT of VO2 by applying stress to the GST.