Presentation Information
[23a-P07-5]Fabrication of SiN thin film by evaporation method
〇Koichi Muro1, Akira Mochiduki2, Wataru Kanazawa3 (1.Teikyo Univ., 2.Taishou Optical., 3.Sanwa Kenma, Ltd.)
Keywords:
SiN thin film,Evaporation method,Evaporation material
The silicon nitride (Si3N4) thin film used as the transparent protective film is generally deposited by sputtering. In contrast, there is a demand for Si3N4 film formation by evaporation method. Therefore, we fabricated a silicon nitride (SiN) thin film using a evaporation method (N2 ion assisted deposition). Transmittance, hardness, and stress vary depending on the starting material. Compared to the SiO2 thin film (O2 ion assisted deposition) used as a general optical protective film, the hardness was two to three times higher.