[23a-P07-1~19] 6.4 Thin films and New materials

English Presentation

[23a-P07-8] Relationship between the sputtering power and the properties of RuTe₂ thin film

〇(D)SHIHYUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1.Tohoku Univ., 2.Tohoku Univ. AIMR)

Keywords:

chalcogenide,RuTe2,thin film

PCRAM (Phase Change Random Access Memory) operates by leveraging the resistivity contrast between the crystalline and amorphous phases of the phase change material for data storage. However, its energy consumption is substantial, as it is necessary to heat the material beyond its melting point and then rapidly cooling it to achieve the amorphous phase. By examining the phase diagram of the Ru-Te, it reveals that RuTe₂ exhibits a marcasite phase at low temperatures and a pyrite phase at high temperatures. If these two polymorphic phases of RuTe₂ show a substantial resistivity difference, there is potential to create a novel type of PCRAM that operates without the need for melting.